2SA1227 データシートの表示（PDF） - Quanzhou Jinmei Electronic

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2SA1227

Silicon PNP Power Transistors

Quanzhou Jinmei Electronic 

JMnic

Silicon PNP Power Transistors

Product Specification

2SA1227 2SA1227A

CHARACTERISTICS

Tj=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

VCEsat Collector-emitter saturation voltage IC=-5A ;IB=-0.5A

VBEsat Base-emitter saturation voltage

IC=-5A ;IB=-0.5A

ICBO

Collector cut-off current

VCB=-140V; IE=0

IEBO

Emitter cut-off current

hFE-1

DC current gain

hFE -2

DC current gain

VEB=-3V; IC=0

IC=-2A ; VCE=-5V

IC=-5A ; VCE=-5V

COB

Output capacitance

IE=0 ; VCB=-10V;f=1MHz

fT

Transition frequency

IC=-1A ; VCE=-5V

MIN TYP. MAX UNIT

-0.8 -1.5

V

-1.5 -2.0

V

-50 μA

-50 μA

60

320

40

280

pF

60

MHz

‹ hFE-1 classifications

R

Q

P

60-120 100-200 160-320

2

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