2SA1313 データシートの表示（PDF） - Toshiba
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2SA1313 Datasheet PDF : 4 Pages
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TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process)
2SA1313
Audio Frequency Low Power Amplifier Applications
Driver Stage Amplifier Applications
Switching Applications
2SA1313
Unit: mm
• Excellent hFE linearity: hFE (2) = 25 (min)
at VCE = −6 V, IC = −400 mA
• High voltage: VCEO = −50 V (min)
• Complementary to 2SC3325
• Small package
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power dissipation
Junction temperature
Storage temperature range
VCBO
VCEO
VEBO
IC
IB
PC
Tj
Tstg
−50
V
−50
V
−5
V
−500
mA
−50
mA
200
mW
150
°C
−55~150
°C
JEDEC
TO-236MOD
JEITA
SC-59
TOSHIBA
2-3F1A
Weight: 0.012 g (typ.)
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in temperature, etc.) may cause this product to
decrease in the reliability significantly even if the operating conditions (i.e. operating
temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Marking
1
2007-11-01
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