2N6495 データシートの表示（PDF） - Inchange Semiconductor

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2N6495

Silicon NPN Power Transistors

Inchange Semiconductor 

Inchange Semiconductor

Silicon NPN Power Transistors

CHARACTERISTICS

Tj=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

VCEO(SUS) Collector-emitter sustaining voltage IC=0.1 A ; IB=0

VCEsat Collector-emitter saturation voltage IC=10A; IB=1A

VBEsat Base-emitter saturation voltage

IC=10A; IB=1A

VBE

Base -emitter on voltage

ICEV

Collector cut-off current

ICEO

Collector cut-off current

IC=10A ; VCE=3V

VCE=150V;VBE(off)=-1.5V

TC=150℃

VCE=40V; IB=0

IEBO

Emitter cut-off current

VEB=7V; IC=0

hFE

DC current gain

IC=10A ; VCE=3V

fT

Transition frequency

IC=1 A ; VCE=10V

Product Specification

2N6495

MIN TYP. MAX UNIT

80

V

1.5

V

2.0

V

2.8

V

0.1

1.0

mA

0.1

mA

0.1

mA

10

60

25

MHz

2

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