2N5869 データシートの表示（PDF） - Inchange Semiconductor
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2N5869 Datasheet PDF : 3 Pages
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Inchange Semiconductor
Silicon NPN Power Transistors
Product Specification
2N5869 2N5870
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
2N5869
60
VCEO(SUS)
Collector-emitter
sustaining voltage
IC=0.1A ;IB=0
V
2N5870
80
VCEsat Collector-emitter saturation voltage
IC=5A;IB=1A
1.0
V
VBEsat Base-emitter saturation voltage
IC=5A; IB=1A
1.5
V
ICBO
Collector cut-off current
VCB=ratedVCBO; IB=0
1.0
mA
ICEO
Collector cut-off current
2N5869 VCE=30V; IB=0
2N5870 VCE=40V; IB=0
2.0
mA
IEBO
Emitter cut-off current
VEB=5V; IC=0
1.0
mA
hFE
DC current gain
IC=1.5A ; VCE=4V
20
100
fT
Trainsistion frequency
IC=0.5A ; VCE=10V;f=1MHz
4
MHz
2
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