2N5496 データシートの表示（PDF） - Inchange Semiconductor
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2N5496 Datasheet PDF : 3 Pages
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Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors 2N5490 2N5492 2N5494 2N5496
DESCRIPTION
·With TO-220 package
·High power dissipation
APPLICATIONS
·For used in medium power and
amplifier applications
PINNING
PIN
DESCRIPTION
1
Base
2
Collector;connected to
mounting base
3
Emitter
Absolute maximum ratings(Ta=25℃)
SYMBOL
PARAMETER
2N5490/5494
VCBO
Collector-base voltage 2N5492
2N5496
2N5490/5494
VCEO
Collector-emitter voltage 2N5492
2N5496
VEBO
Emitter-base voltage
IC
Collector current
IB
Base current
PT
Total power dissipation
Tj
Junction temperature
Tstg
Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
TC=25℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c
Thermal resistance from junction to case
VALUE
60
75
90
40
55
70
5
7
3
50
150
-65~150
UNIT
V
V
V
A
A
W
℃
℃
MAX
2.5
UNIT
℃/W
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