2N4913 データシートの表示（PDF） - Inchange Semiconductor

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2N4913

Silicon NPN Power Transistors

Inchange Semiconductor 

INCHANGE Semiconductor

isc Silicon NPN Power Transistors

isc Product Specification

2N4913

DESCRIPTION

·Low Collector Saturation Voltage-

: VCE(sat)= 1.5V(Max.)@ IC= 5A

·DC Current Gain-

: hFE= 25-100 @IC= 2.5A

·Complement to Type 2N4904

APPLICATIONS

·Designed for general purpose use in power amplifier and

switching circuits.

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL

PARAMETER

VALUE

UNIT

VCBO

Collector-Base Voltage

40

V

VCEO Collector-Emitter Voltage

40

V

VEBO

Emitter-Base Voltage

5

V

IC

Collector Current-Continuous

5

A

IB

Base Current-Continuous

1

A

PC

Collector Power Dissipation@TC=25℃ 87.5

W

TJ

Junction Temperature

200

℃

Tstg

Storage Temperature

-65~200 ℃

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

Rth j-c Thermal Resistance,Junction to Case

MAX UNIT

2.0 ℃/W

isc Website：www.iscsemi.cn

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