J2N2907AUB1(2012) データシートの表示（PDF） - STMicroelectronics
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| J2N2907AUB1 Datasheet PDF : 0 Pages | |||
2N2907AHR
Hi-Rel 60 V - 0.6 A PNP transistor
Features
Datasheet — production data
Parameter
BVCEO
IC (max)
HFE at 10 V - 150 mA
Value
60 V
0.6 A
> 100
■ Linear gain characteristics
■ Hermetic packages
■ ESCC and JANS qualified
■ European preferred part list EPPL
Description
The 2N2907AHR is a silicon planar PNP
transistor specifically designed and housed in
hermetic packages for aerospace and Hi-Rel
applications. It is available in the JAN qualification
system (MIL-PRF19500 compliance) and in the
ESCC qualification system (ESCC 5000
compliance). In case of discrepancies between
this datasheet and the relevant agency
specification, the latter takes precedence.
1
2
3
TO-18
3
3
1
2
LCC-3
4
1
2
LCC-3UB
Pin 4 in LCC-3UB is connected to the metallic lid.
Figure 1. Internal schematic diagram
Table 1. Device summary(1)
Order codes Qualification
Agency spec.
Package
Radiation level EPPL
JANS2N2907A
2N2907AUB
SOC2907A
JANS
ESCC
MIL-PRF-19500/291
5201/001
LCC-3UB
LCC-3UB
LCC-3
-
Yes
-
Yes
2N2907AHR
TO-18
-
1. Contact ST sales office for information about the specific conditions for products in die form and other JAN quality levels.
May 2012
This is information on a product in full production.
Doc ID 15382 Rev 3
1/16
www.st.com
16
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