KA3S0680 データシートの表示（PDF） - Fairchild Semiconductor

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KA3S0680

Fairchild Power Switch(FPS)

Fairchild Semiconductor 

KA3S0680RB/KA3S0680RFB

Electrical Characteristics (SFET part)

(Ta = 25°C unless otherwise specified)

Characteristic

Symbol

Test condition

Min. Typ. Max. Unit

Drain source breakdown voltage

BVDSS

Zero gate voltage drain current

IDSS

Static drain source on resistance (note)

Forward transconductance (note)

Input capacitance

Output capacitance

Reverse transfer capacitance

RDS(ON)

gfs

Ciss

Coss

Crss

VGS = 0V, ID = 50µA

VDS = Max., Rating,

VGS = 0V

VDS = 0.8Max., Rating,

VGS = 0V, TC = 125°C

VGS = 10V, ID = 4.0A

VDS = 15V, ID = 4.0A

VGS = 0V, VDS = 25V,

f = 1MHz

800 -

-

-

-

V

50 µA

-

- 200 mA

-

1.6 2.0 W

1.5 2.5

-

S

- 1600 -

-

140 -

pF

-

42

-

Turn on delay time

Rise time

Turn off delay time

Fall time

td(on) VDD= 0.5BVDSS, ID= 6.0A -

60

-

tr

(MOSFET switching

- 150 -

td(off)

time are essentially

independent of

-

300 -

nS

tf

operating temperature)

- 130 -

Total gate charge

(gate-source+gate-drain)

Gate source charge

Gate drain (Miller) charge

Qg

VGS =10V, ID = 6.0A,

VDS = 0.5BVDSS (MOSFET

-

70

-

Qgs switching time are

-

16

-

nC

essentially independent of

Qgd

operating temperature)

-

27

-

Note:

Pulse test: Pulse width ≤ 300µS, duty cycle ≤ 2%

S = -1--

R

3

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