PEMB16 データシートの表示（PDF） - NXP Semiconductors.
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PEMB16 Datasheet PDF : 9 Pages
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NXP Semiconductors
PEMB16; PUMB16
PNP/PNP resistor-equipped transistors; R1 = 22 kΩ, R2 = 47 kΩ
7. Characteristics
Table 8. Characteristics
Tamb = 25 °C unless otherwise specified.
Symbol Parameter
Conditions
Per transistor
ICBO
collector-base cut-off VCB = −50 V; IE = 0 A
current
ICEO
IEBO
collector-emitter
cut-off current
emitter-base cut-off
current
VCE = −30 V; IB = 0 A
VCE = −30 V; IB = 0 A;
Tj = 150 °C
VEB = −5 V; IC = 0 A
hFE
VCEsat
DC current gain
collector-emitter
saturation voltage
VCE = −5 V; IC = −5 mA
IC = −10 mA; IB = −0.5 mA
VI(off)
VI(on)
R1
off-state input voltage
on-state input voltage
bias resistor 1 (input)
VCE = −5 V; IC = −100 µA
VCE = −0.3 V; IC = −2 mA
R2/R1
bias resistor ratio
Cc
collector capacitance VCB = −10 V; IE = ie = 0 A;
f = 1 MHz
Min
Typ
Max
Unit
-
-
−100
nA
-
-
−1
µA
-
-
−50
µA
-
-
−120
µA
80
-
-
-
-
−150
mV
-
−0.8
−0.5
V
−2
−1.1
-
V
15.4
22
28.6
kΩ
1.7
2.1
2.6
-
-
3
pF
PEMB16_PUMB16_3
Product data sheet
Rev. 03 — 31 August 2009
© NXP B.V. 2009. All rights reserved.
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