Electrical Characteristics @TA = 25°C unless otherwise specified
Characteristic
OFF CHARACTERISTICS (Note 5)
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Base Cutoff Current
ON CHARACTERISTICS (Note 5)
DC Current Gain
Symbol Min
V(BR)CBO
75
V(BR)CEO
40
V(BR)EBO
6.0
ICEX
⎯
IBL
⎯
35
50
hFE
75
100
40
Collector-Emitter Saturation Voltage
VCE(SAT)
⎯
Base-Emitter Saturation Voltage
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
Input Capacitance
VBE(SAT)
0.6
⎯
Cobo
⎯
Cibo
—
Current Gain-Bandwidth Product
fT
300
Input Impedance
hie
Voltage Feedback Ratio
hre
Small-Signal Current Gain
hfe
Output Admittance
hoe
SWITCHING CHARACTERISTICS
Delay Time
td
Rise Time
tr
Storage Time
ts
Fall Time
tf
Notes: 5. Short duration pulse test used to minimize self-heating effect.
0.25
⎯
75
25
⎯
⎯
⎯
⎯
Max
⎯
⎯
⎯
10
20
⎯
⎯
⎯
300
⎯
0.3
1.0
1.2
2.0
8
30
⎯
1.25
4.0
375
200
10
25
225
60
Unit
Test Condition
V IC = 10μA, IE = 0
V IC = 10mA, IB = 0
V IE = 10μA, IC = 0
nA VCE = 60V, VEB(OFF) = 3.0V
nA VCE = 60V, VEB(OFF) = 3.0V
IC = 100μA, VCE = 10V
IC = 1.0mA, VCE = 10V
⎯ IC = 10mA, VCE = 10V
IC = 150mA, VCE = 10V
IC = 500mA, VCE = 10V
V
IC = 150mA, IB = 15mA
IC = 500mA, IB = 50mA
V
IC = 150mA, IB = 15mA
IC = 500mA, IB = 50mA
pF
pF
MHz
kΩ
X 10-4
⎯
μS
VCB = 10V, f = 1.0MHz, IE = 0
VEB = 0.5V, f = 1.0MHz, IC = 0
VCE = 20V, IC = 20mA,
f = 100MHz
VCE = 10 Vdc, IC = 10 mAdc, f = 1.0kHz
VCE = 10 Vdc, IC = 10 mAdc, f = 1.0kHz
VCE = 10 Vdc, IC = 10 mAdc, f = 1.0kHz
VCE = 10 Vdc, IC = 10 mAdc, f = 1.0kHz
ns VCC = 30V, IC = 150mA,
ns VBE(off) = - 0.5V, IB1 = 15mA
ns VCC = 30V, IC = 150mA,
ns IB1 = IB2 = 15mA
250
1,000
200
TA = 125°C
150
100
50
0
0
40
80
120
160
200
TA, AMBIENT TEMPERATURE (°C)
Fig. 1 Power Derating Curve
100
TA = -25°C
TA = +25°C
10
VCE = 1.0V
1
0.1
1
10
100
1,000
IC, COLLECTOR CURRENT (mA)
Fig. 2 Typical DC Current Gain vs.
Collector Current
DS30268 Rev. 10 - 2
2 of 4
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