Q62702-C633 データシートの表示（PDF） - Siemens AG

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Q62702-C633

PNP Silicon AF Transistors

Siemens AG 

BCX 78

BCX 79

Electrical Characteristics

at TA = 25 ˚C, unless otherwise specified.

Parameter

DC characteristics

Collector-emitter breakdown voltage

IC = 2 mA

BCX 78

BCX 79

Collector-base breakdown voltage

IC = 10 µA

BCX 78

BCX 79

Emitter-base breakdown voltage

IE = 1 µA

Collector cutoff current

VCB = 32 V

VCB = 45 V

VCB = 32 V, TA = 150 ˚C

VCB = 45 V, TA = 150 ˚C

BCX 78

BCX 79

BCX 78

BCX 79

Collector cutoff current

VCB = 32 V, VBE = 0.2 V,TA = 100 ˚C

VCB = 45 V, VBE = 0.2 V,TA = 100 ˚C

Emitter cutoff current

VEB = 4 V

DC current gain

IC = 10 µA, VCE = 5 V

BCX 78 VII, BCX 79 VII

BCX 78 VIII, BCX 79 VIII

BCX 78 IX, BCX 79 IX

BCX 78 X, BCX 79 X

IC = 2 mA, VCE = 5 V

BCX 78 VII, BCX 79 VII

BCX 78 VIII, BCX 79 VIII

BCX 78 IX, BCX 79 IX

BCX 78 X, BCX 79 X

IC = 100 mA, VCE = 1 V1)

BCX 78 VII, BCX 79 VII

BCX 78 VIII, BCX 79 VIII

BCX 78 IX, BCX 79 IX

BCX 78 X, BCX 79 X

Symbol

Values

Unit

min. typ. max.

V(BR)CE0

V

32

–

–

45

–

–

V(BR)CB0

32

–

–

45

–

–

V(BR)EB0 5

–

–

ICB0

–

–

20 nA

–

–

20 nA

–

–

10

µA

–

–

10

µA

ICE0

µA

–

–

20

–

–

20

IEB0

–

–

20 nA

hFE

–

20

140 –

30

200 –

40

270 –

100 340 –

120 170 220

180 250 310

250 350 460

380 500 630

40

–

–

45

–

–

60

–

–

60

–

–

1) Pulse test: t ≤ 300 µs, D ≤ 2 %.

Semiconductor Group

3

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