SI5441DC(1999) データシートの表示（PDF） - Vishay Semiconductors
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SI5441DC Datasheet PDF : 4 Pages
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Si5441DC
Vishay Siliconix
New Product
SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Static
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Currenta
Drain-Source On-State Resistancea
Forward Transconductancea
Diode Forward Voltagea
Dynamicb
VGS(th)
IGSS
IDSS
ID(on)
rDS(on)
gfs
VSD
VDS = VGS, ID = –250 mA
VDS = 0 V, VGS = "12 V
VDS = –16 V, VGS = 0 V
VDS = –16 V, VGS = 0 V, TJ = 85_C
VDS p–5 V, VGS = –4.5 V
VGS = –4.5 V, ID = –3.9 A
VGS = –3.6 V, ID = –3.7 A
VGS = –2.5 V, ID = –3.1 A
VDS = –10 V, ID = –3.9 A
IS = –1.1 A, VGS = 0 V
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain Reverse Recovery Time
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
trr
Notes
a. Pulse test; pulse width v 300 ms, duty cycle v 2%.
b. Guaranteed by design, not subject to production testing.
VDS = –10 V, VGS = –4.5 V, ID = –3.9 A
VDD = –10 V, RL = 10 W
ID ^ –1 A, VGEN = –4.5 V, RG = 6 W
IF = –1.1 A, di/dt = 100 A/ms
Min
Typ
Max Unit
–0.6
V
"100
nA
–1
mA
–5
–20
A
0.046
0.055
0.050
0.06
W
0.070
0.083
12
S
–0.8
–1.2
V
11
22
3.0
nC
2.5
20
30
35
55
65
100
ns
45
70
30
60
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
20
VGS = 5 thru 3 V
16
2.5 V
12
8
2V
4
1.5 V
0
0
0.5
1.0
1.5
2.0
2.5
3.0
VDS – Drain-to-Source Voltage (V)
www.vishay.com S FaxBack 408-970-5600
2-2
Transfer Characteristics
20
TC = –55_C
16
25_C
12
125_C
8
4
0
0
0.5
1.0
1.5
2.0
2.5
3.0
VGS – Gate-to-Source Voltage (V)
Document Number: 71055
S-62426—Rev. A, 04-Oct-99
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