SI1304DL データシートの表示（PDF） - Vishay Semiconductors
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SI1304DL Datasheet PDF : 5 Pages
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Si1304DL
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
On-Resistance vs. Drain Current
1.0
200
Capacitance
0.8
0.6
VGS = 2.5 V
0.4
0.2
VGS = 4.5 V
0.0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
ID − Drain Current (A)
Gate Charge
8
VDS = 15 V
ID = 0.75 A
6
4
2
0
0.0
0.5
1.0
1.5
2.0
2.5
Qg − Total Gate Charge (nC)
Source-Drain Diode Forward Voltage
10
150
100
Ciss
50
Coss
Crss
0
0
5
10
15
20
25
VDS − Drain-to-Source Voltage (V)
On-Resistance vs. Junction Temperature
1.8
VGS = 4.5 V
1.6
ID = 0.75 A
1.4
1.2
1.0
0.8
0.6
−50 −25 0
25 50 75 100 125 150
TJ − Junction Temperature (_C)
On-Resistance vs. Gate-to-Source Voltage
0.8
1
TJ = 150_C
0.1
TJ = 25_C
0.01
0.6
ID = 0.75 A
0.4
0.2
0.001
0.0
0.2
0.4
0.6
0.8
1.0
1.2
VSD − Source-to-Drain Voltage (V)
Document Number: 71315
S-41774—Rev. C, 04-Oct-04
0.0
0
2
4
6
8
VGS − Gate-to-Source Voltage (V)
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