S70FL256P0XBFI210 データシートの表示（PDF） - Spansion Inc.

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S70FL256P0XBFI210

256-Mbit CMOS 3.0 Volt Flash Memory with 104-MHz SPI (Serial Peripheral Interface) Multi I/O Bus

Spansion Inc. 

Data Sheet

8. DC Characteristics

This section summarizes the DC Characteristics of the device. Designers should check that the operating

conditions in their circuit match the measurement conditions specified in the Test Specifications in Table 9.1

on page 13, when relying on the quoted parameters.

Table 8.1 DC Characteristics (CMOS Compatible)

Symbol

Parameter

Test Conditions

VCC

Supply Voltage

VHH

ACC Program Acceleration

Voltage

VCC = 2.7V to 3.6V

VIL

Input Low Voltage

VIH

Input High Voltage

VOL

Output Low Voltage

IOL = 1.6 mA, VCC = VCC min.

VOH

Output High Voltage

ILI

Input Leakage Current

ILO

Output Leakage Current

Active Power Supply Current -

ICC1

READ

(SO = Open)

IOH = -0.1 mA

VCC = VCC Max,

VIN = VCC or GND

VCC = VCC Max,

VIN = VCC or GND

At 80 MHz

(Dual or Quad)

At 104 MHz (Serial)

At 40 MHz (Serial)

ICC2

Active Power Supply Current

(Page Program)

CS# = VCC

ICC3

Active Power Supply Current

(WRR)

CS# = VCC

ICC4

Active Power Supply Current

(SE)

CS# = VCC

ICC5

Active Power Supply Current

(BE) (2)

CS# = VCC

ISB1

Standby Current

IPD

Deep Power-down Current

CS# = VCC;

SO + VIN = GND or VCC

CS# = VCC;

SO + VIN = GND or VCC

Notes:

1. Typical values are at TAI = 25°C and VCC = 3V.

2. Bulk Erase is on a die per die basis, not for the whole device.

Min.

2.7

8.5

-0.3

0.7 x VCC

VCC-0.6

Limits

Typ. (1)

160

6

Max.

3.6

9.5

0.3 x VCC

VCC +0.5

0.4

2

2

44

32

15

26

15

26

26

500

20

Unit

V

V

V

V

V

V

µA

µA

mA

mA

mA

mA

mA

µA

µA

12

S70FL256P

S70FL256P_00_04 June 24, 2011

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