MCP603-E データシートの表示（PDF） - Microchip Technology

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MCP603-E

2.7V to 5.5V Single Supply CMOS Op Amps

Microchip Technology 

MCP601/1R/2/3/4

TEMPERATURE CHARACTERISTICS

Electrical Specifications: Unless otherwise indicated, VDD = +2.7V to +5.5V and VSS = GND.

Parameters

Sym Min Typ Max Units

Conditions

Temperature Ranges

Specified Temperature Range

TA

-40

—

+85

°C Industrial temperature parts

TA

-40

— +125 °C Extended temperature parts

Operating Temperature Range

TA

-40

— +125 °C Note

Storage Temperature Range

TA

-65

— +150 °C

Thermal Package Resistances

Thermal Resistance, 5L-SOT23

θJA

—

256

— °C/W

Thermal Resistance, 6L-SOT23

θJA

—

230

— °C/W

Thermal Resistance, 8L-PDIP

θJA

—

85

— °C/W

Thermal Resistance, 8L-SOIC

θJA

—

163

— °C/W

Thermal Resistance, 8L-TSSOP

θJA

—

124

— °C/W

Thermal Resistance, 14L-PDIP

θJA

—

70

— °C/W

Thermal Resistance, 14L-SOIC

θJA

—

120

— °C/W

Thermal Resistance, 14L-TSSOP θJA

—

100

— °C/W

Note: The Industrial temperature parts operate over this extended range, but with reduced performance. The

Extended temperature specs do not apply to Industrial temperature parts. In any case, the internal Junction

temperature (TJ) must not exceed the absolute maximum specification of 150°C.

1.1 Test Circuits

The test circuits used for the DC and AC tests are

shown in Figure 1-2 and Figure 1-2. The bypass

capacitors are laid out according to the rules discussed

in Section 4.5 “Supply Bypass”.

VIN

RN

VDD/2 RG

VDD 0.1 µF 1 µF

MCP60X

RF

VOUT

CL RL

VL

FIGURE 1-2:

AC and DC Test Circuit for

Most Non-Inverting Gain Conditions.

VDD/2

RN

VIN RG

VDD 0.1 µF 1 µF

MCP60X

RF

VOUT

CL RL

VL

FIGURE 1-3:

AC and DC Test Circuit for

Most Inverting Gain Conditions.

DS21314G-page 4

© 2007 Microchip Technology Inc.

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