MBR60100CT-E3/45(2008) データシートの表示（PDF） - Vishay Semiconductors
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MBR60100CT-E3/45 Datasheet PDF : 4 Pages
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New Product
MBR60100CT
Vishay General Semiconductor
100
TJ = 175 °C
10
TJ = 150 °C
TJ = 125 °C
1
TJ = 25 °C
0.1
0.01
0
0.2
0.4
0.6
0.8
1.0
Instantaneous Forward Voltage (V)
Figure 3. Typical Instantaneous Forward Characteristics Per Diode
10 000
1000
100
0.1
1
10
100
Reverse Voltage (V)
Figure 5. Typical Junction Capacitance Per Diode
100 000
1
10 000
1000
100
TJ = 175 °C
TJ = 150 °C
TJ = 125 °C
10
1
TJ = 25 °C
0.1
0 10 20 30 40 50 60 70 80 90 100
Percent of Rated Peak Reverse Voltage (%)
Figure 4. Typical Reverse Characteristics Per Diode
0.1
0.01
0.1
1
10
100
t - Pulse Duration (s)
Figure 6. Typical Transient Thermal Impedance Per Diode
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
0.055 (1.40)
0.047 (1.20)
0.067 (1.70)
TYP.
0.118 (3.00)
TYP.
0.398 (10.10)
0.382 (9.70)
0.343 (8.70)
TYP.
0.331 (8.40)
TYP.
PIN
123
TO-220AB
0.150 (3.80)
0.139 (3.54)
DIA.
0.114 (2.90)
0.106 (2.70)
0.154 (3.90)
0.138 (3.50)
0.634 (16.10)
0.618 (15.70)
1.161 (29.48)
1.106 (28.08)
0.370 (9.40)
0.354 (9.00)
0.523 (13.28)
0.507 (12.88)
0.035 (0.90)
0.028 (0.70)
0.100 (2.54)
TYP.
0.064 (1.62)
0.056 (1.42)
0.200 (5.08) TYP.
0.024 (0.60)
0.018 (0.45)
0.185 (4.70)
0.169 (4.30)
0.055 (1.40)
0.049 (1.25)
0.638 (16.20)
0.598 (15.20)
0.102 (2.60)
0.087 (2.20)
Document Number: 88892 For technical questions within your region, please contact one of the following:
Revision: 19-May-08
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
www.vishay.com
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