HY27SS08561M-TP データシートの表示（PDF） - Hynix Semiconductor

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HY27SS08561M-TP

256Mbit (32Mx8bit / 16Mx16bit) NAND Flash Memory

Hynix Semiconductor 

HY27SS(08/16)561M Series

HY27US(08/16)561M Series

256Mbit (32Mx8bit / 16Mx16bit) NAND Flash

pointer code is issued. However, the Read B command is effective for only one operation, once an operation has been

executed in Area B the pointer returns automatically to Area A.

The pointer operations can also be used before a program operation, that is the appropriate code (00h, 01h or 50h)

can be issued before the program command 80h is issued (see Figure 9).

Area A

(00h)

x8 Devices

Area B

(01h)

Area C

(50h)

Bytes 0-255

Bytes 256-511

Bytes

512-527

x16 Devices

Area A

(00h)

Words 0-255

Area C

(50h)

Words

256-263

A

B

C

Page Buffer

A

C

Page Buffer

Pointer

(00h, 01h, 50h)

Figure 8. Pointer Operation

Pointer

(00h, 50h)

AREA A

I/O

00h

80h

Address

Inputs

Data

Input

10h

00h

80h

Address

Inputs

Data

Input

10h

AREA A, B, C can be programmed depending on how much data is input.

Subsequent 00h commands can be omitted.

AREA B

I/O

01h

80h

Address

Inputs

Data

Input

10h

01h

80h

Address

Inputs

Data

Input

10h

AREA B, C can be programmed depending on how much data is input.

The 01h command must be re-issued before each program.

AREA C

I/O

50h

80h

Address

Inputs

Data

Input

10h

50h

80h

Only Areas C can be programmed.

Subsequent 50h commands can be omitted.

Address

Inputs

Data

Input

10h

Figure 9. Pointer Operations for Programming

Rev 0.7 / Oct. 2004

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