ST330C04C0 データシートの表示（PDF） - International Rectifier
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ST330C04C0 Datasheet PDF : 8 Pages
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ST330C..C Series
Bulletin I25155 rev. D 04/03
ELECTRICAL SPECIFICATIONS
Voltage Ratings
Voltage
Type number Code
04
VDRM/VRRM, max. repetitive
peak and off-state voltage
V
400
08
800
ST330C..C
12
1200
14
1400
16
1600
VRSM , maximum non-
repetitive peak voltage
V
500
900
1300
1500
1700
IDRM/IRRM max.
@ TJ = TJ max
mA
50
On-state Conduction
Parameter
IT(AV) Max. average on-state current
@ Heatsink temperature
IT(RMS) Max. RMS on-state current
ITSM Max. peak, one-cycle
non-repetitive surge current
I2t
Maximum I2t for fusing
I2√t Maximum I2√t for fusing
VT(TO)1 Low level value of threshold
voltage
VT(TO)2 High level value of threshold
voltage
rt1
Low level value of on-state
slope resistance
rt2
High level value of on-state
slope resistance
VTM Max. on-state voltage
IH
Maximum holding current
IL
Typical latching current
Switching
Parameter
di/dt Max. non-repetitive rate of rise
of turned-on current
td
Typical delay time
tq
Typical turn-off time
2
ST330C..C
720 (350)
55 (75)
1420
9000
9420
7570
7920
405
370
287
262
4050
Units Conditions
A 180° conduction, half sine wave
°C double side (single side) cooled
DC @ 25°C heatsink temperature double side cooled
t = 10ms No voltage
A t = 8.3ms reapplied
t = 10ms 100% VRRM
t = 8.3ms reapplied
Sinusoidal half wave,
KA2s
KA2√s
t = 10ms No voltage
t = 8.3ms reapplied
Initial TJ = TJ max.
t = 10ms
t = 8.3ms
100% VRRM
reapplied
t = 0.1 to 10ms, no voltage reapplied
0.91
0.92
(16.7% x π x IT(AV) < I < π x IT(AV)), TJ = TJ max.
V
(I > π x IT(AV)),TJ = TJ max.
0.58
0.57
1.96
600
1000
(16.7% x π x IT(AV) < I < π x IT(AV)), TJ = TJ max.
mΩ
(I > π x IT(AV)),TJ = TJ max.
V
Ipk= 1810A, TJ = TJ max, tp = 10ms sine pulse
mA TJ = 25°C, anode supply 12V resistive load
ST330C..C
1000
1.0
100
Units Conditions
A/µs
µs
Gate drive 20V, 20Ω, tr ≤ 1µs
TJ = TJ max, anode voltage ≤ 80% VDRM
Gate current 1A, dig/dt = 1A/µs
Vd = 0.67% VDRM, TJ = 25°C
ITM = 550A, TJ = TJ max, di/dt = 40A/µs, VR = 50V
dv/dt = 20V/µs, Gate 0V 100Ω, tp = 500µs
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