MRF5S21090LSR3 データシートの表示（PDF） - Motorola => Freescale

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MRF5S21090LSR3

RF Power Field Effect Transistors

Motorola => Freescale 

MOTOROLA

Freescale Semiconductor, Inc.

SEMICONDUCTOR TECHNICAL DATA

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by MRF5S21090L/D

The RF MOSFET Line

RF Power Field Effect Transistors MRF5S21090LR3

N - Channel Enhancement - Mode Lateral MOSFETs MRF5S21090LSR3

Designed for W- CDMA base station applications with frequencies from 2110

to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applica-

t i o n s . To b e u s e d i n C l a s s A B f o r P C N - P C S / c e l l u l a r r a d i o a n d W L L

applications.

• Typical 2 - carrier W - CDMA Performance for VDD = 28 Volts,

IDQ = 850 mA, f1 = 2135 MHz, f2 = 2145 MHz, Channel Bandwidth =

3.84 MHz, Adjacent Channels Measured over 3.84 MHz BW @ f1 -5 MHz

and f2 +5 MHz, Distortion Products Measured over a 3.84 MHz BW

@ f1 - 10 MHz and f2 +10 MHz, Peak/Avg. = 8.5 dB @ 0.01% Probability

on CCDF.

Output Power — 19 Watts Avg.

Power Gain — 14.5 dB

Efficiency — 26%

IM3 — - 37.5 dBc

ACPR — - 40.5 dBc

• Internally Matched, Controlled Q, for Ease of Use

• High Gain, High Efficiency and High Linearity

• Integrated ESD Protection

• Designed for Maximum Gain and Insertion Phase Flatness

• Capable of Handling 10:1 VSWR, @ 28 Vdc, 2140 MHz, 90 Watts CW

Output Power

• Excellent Thermal Stability

• Characterized with Series Equivalent Large - Signal Impedance Parameters

• Qualified Up to a Maximum of 32 VDD Operation

• Available with Low Gold Plating Thickness on Leads. L Suffix Indicates

40µ″ Nominal.

• In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.

2170 MHz, 19 W AVG.,

2 x W - CDMA, 28 V

LATERAL N - CHANNEL

RF POWER MOSFETs

CASE 465 - 06, STYLE 1

NI - 780

MRF5S21090LR3

CASE 465A - 06, STYLE 1

NI - 780S

MRF5S21090LSR3

MAXIMUM RATINGS

Rating

Drain- Source Voltage

Gate- Source Voltage

Total Device Dissipation @ TC = 25°C

Derate above 25°C

Storage Temperature Range

Operating Junction Temperature

THERMAL CHARACTERISTICS

Characteristic

Thermal Resistance, Junction to Case

Case Temperature 80°C, 90 W CW

Case Temperature 80°C, 19 W CW

Symbol

VDSS

VGS

PD

Tstg

TJ

Symbol

RθJC

Value

65

- 0.5, +15

224

1.28

- 65 to +150

200

Value (1,2)

0.78

0.80

Unit

Vdc

Vdc

Watts

W/°C

°C

°C

Unit

°C/W

(1) MTTF calculator available at http://www.motorola.com/semiconductors/rf. Select Tools/Software/Application Software/Calculators to

access the MTTF calculators by product.

(2) Refer to AN1955/D, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.motorola.com/semiconductors/rf.

Select Documentation/Application Notes - AN1955.

NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and

packaging MOS devices should be observed.

REV 1

 MMoOtoTroOla,RInOc.L2A00R4 F DEVICE DATA

MRF5S21090LR3 MRF5S21090LSR3

For More Information On This Product,

Go to: www.freescale.com

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