IS65C51216AL(2009) データシートの表示（PDF） - Integrated Silicon Solution

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IS65C51216AL
(Rev.:2009)

512K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM

Integrated Silicon Solution 

IS62C51216AL, IS65C51216AL

ABSOLUTE MAXIMUM RATINGS(1)

Symbol Parameter

Value

Unit

Vterm Terminal Voltage with Respect to GND

–0.5 to +7.0

V

Tstg

Storage Temperature

–65 to +150

°C

Pt

Power Dissipation

1.5

W

Iout

DC Output Current (LOW)

20

mA

Notes:

1. Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause

permanent damage to the device. This is a stress rating only and functional operation

of the device at these or any other conditions above those indicated in the operational

sections of this specification is not implied. Exposure to absolute maximum rating con-

ditions for extended periods may affect reliability.

DC ELECTRICAL CHARACTERISTICS (Over Operating Range)

Symbol Parameter

Test Conditions Min.

Voh

Output HIGH Voltage Vdd = Min., Ioh = –1 mA

2.4

Vol

Output LOW Voltage

Vdd = Min., Iol = 2.1 mA

—

Vih

Input HIGH Voltage

2.2

Vil

Input LOW Voltage(1)

–0.3

Ili

Input Leakage

GND ≤ Vin ≤ Vdd

Com. –1

Ind. –2

Auto. –5

Ilo

Output Leakage

GND ≤ Vout ≤ Vdd

Outputs Disabled

Com. –1

Ind. –2

Auto. –5

Note:

1. Vil (min) = -0.3V DC; Vil (min) = -2.0V AC (pulse width -2.0 ns). Not 100% tested.

Vih (max) = Vdd + 0.3V DC; Vih (max) = Vdd + 2.0V AC (pulse width -2.0 ns). Not 100% tested.

Max.

Unit

—

V

0.4

V

Vdd + 0.5

V

0.8

V

1

µA

2

5

1

µA

2

5

4

Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774

Rev.  A

03/18/09

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