SIHFI9634G-E3(2008) データシートの表示（PDF） - Vishay Semiconductors
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SIHFI9634G-E3 Datasheet PDF : 8 Pages
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IRFI9634G, SiHFI9634G
Vishay Siliconix
THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
Maximum Junction-to-Ambient
Maximum Junction-to-Case (Drain)
RthJA
RthJC
TYP.
-
-
MAX.
65
3.6
UNIT
°C/W
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
PARAMETER
SYMBOL
TEST CONDITIONS
MIN. TYP. MAX. UNIT
Static
Drain-Source Breakdown Voltage
VDS Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Dynamic
VDS
ΔVDS/TJ
VGS(th)
IGSS
IDSS
RDS(on)
gfs
VGS = 0 V, ID = 250 µA
Reference to 25 °C, ID = 1 mA
VDS = VGS, ID = 250 µA
VGS = ± 20 V
VDS = - 250 V, VGS = 0 V
VDS = - 200 V, VGS = 0 V, TJ = 150 °C
VGS = - 10 V
ID = - 2.5 Ab
VDS = - 50 V, ID = - 4.1 Ab
- 250
-
- 2.0
-
-
-
-
2.2
-
- 0.27
-
-
-
-
-
-
-
-
- 4.0
± 100
- 25
- 250
1.0
-
V
V/°C
V
nA
µA
Ω
S
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Drain to Sink Capacitance
Ciss
Coss
Crss
C
VGS = 0 V,
VDS = - 25 V,
f = 1.0 MHz, see fig. 5
f = 1.0 MHz
-
680
-
-
170
-
pF
-
40
-
-
12
-
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
-
VGS = - 10 V
ID = - 4.1 A, VDS = - 200 V,
see fig. 6 and 13b
-
-
-
VDD = - 130 V, ID = - 4.1 A,
-
RG = 12 Ω, RD= 31 Ω,
see fig. 10b
-
-
-
38
-
8.0
nC
-
18
12
-
23
-
ns
34
-
21
-
Internal Drain Inductance
Internal Source Inductance
LD
Between lead,
6 mm (0.25") from
D
package and center of
G
LS
die contact
S
-
4.5
-
nH
-
7.5
-
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
IS
MOSFET symbol
showing the
Pulsed Diode Forward Currenta
integral reverse
ISM
p - n junction diode
D
G
S
-
-
- 4.1
A
-
-
- 16
Body Diode Voltage
VSD
TJ = 25 °C, IS = - 4.1 A, VGS = 0 Vb
-
-
- 6.5
V
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
trr
-
TJ = 25 °C, IF = - 4.1 A, dI/dt = -100 A/µsb
190
290
ns
Qrr
-
1.5
2.2
µC
Forward Turn-On Time
ton
Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width ≤ 300 µs; duty cycle ≤ 2 %.
www.vishay.com
2
Document Number: 91168
S-Pending-Rev. A, 23-Jun-08
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