VS-GB50YF120N データシートの表示（PDF） - Vishay Semiconductors
部品番号
コンポーネント説明
メーカー
VS-GB50YF120N Datasheet PDF : 10 Pages
| |||
www.vishay.com
VS-GB50YF120N
Vishay Semiconductors
IGBT Fourpack Module, 50 A
ECONO 2
PRIMARY CHARACTERISTICS
VCES
IC at TC = 66 °C
VCE(on) (typical)
Speed
1200 V
50 A
3.49 V
8 kHz to 30 kHz
Package
ECONO 2
Circuit configuration
4 pack
FEATURES
• Square RBSOA
• HEXFRED® low Qrr, low switching energy
• Positive VCE(on) temperature coefficient
• Copper baseplate
• Low stray inductance design
• Designed and qualified for industrial market
• UL approved file E78996
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
BENEFITS
• Benchmark efficiency for SMPS appreciation in particular
HF welding
• Rugged transient performance
• Low EMI, requires less snubbing
• Direct mounting to heatsink space saving
• PCB solderable terminals
• Low junction to case thermal resistance
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
Collector to emitter voltage
VCES
Continuous collector current
IC
Pulsed collector current
See fig. C.T.5
ICM
Clamped inductive load current
ILM
Diode continuous forward current
IF
Diode maximum forward current
IFM
Gate to emitter voltage
VGE
Maximum power dissipation (IGBT)
PD
Maximum operating junction temperature
Storage temperature range
Isolation voltage
TJ
TStg
VISOL
TEST CONDITIONS
TC = 25 °C
TC = 80 °C
TC = 25 °C
TC = 80 °C
TC = 25 °C
TC = 80 °C
MAX.
1200
66
44
150
150
40
25
150
± 20
330
180
150
-40 to +125
AC 2500 (min)
UNITS
V
A
V
W
°C
V
Revision: 20-Sep-17
1
Document Number: 93653
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Share Link: 