BD8158FVM(2010) データシートの表示（PDF） - ROHM Semiconductor

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BD8158FVM
(Rev.:2010)

High-efficiency Step-up Switching Regulators with Built-in Power MOSFET

ROHM Semiconductor 

BD8152FVM, BD8158FVM

I/O Equivalent Circuit Diagrams

1.COMP

Vcc

Technical Note

5.SW

2.FB

Vcc

8.SS

Vcc

Vcc

3.ENB 7.FCLK

Vcc

130kΩ

Fig. 34 I/O Equivalent Circuit Diagram

 Notes of Use

1) Absolute maximum ratings

Use of the IC in excess of absolute maximum ratings such as the applied voltage or operating temperature range may

result in IC damage. Assumptions should not be made regarding the state of the IC (short mode or open mode) when

such damage is suffered. A physical safety measure such as a fuse should be implemented when use of the IC in a

special mode where the absolute maximum ratings may be exceeded is anticipated.

2) GND potential

Ensure a minimum GND pin potential in all operating conditions.

3) Setting of heat

Use a thermal design that allows for a sufficient margin in light of the power dissipation (Pd) in actual operating conditions.

4) Pin short and mistake fitting

Use caution when orienting and positioning the IC for mounting on an application board. Improper mounting may result in

damage to the IC. Shorts between output pins or between output pins and the power supply and GND pins caused by the

presence of a foreign object may result in damage to the IC.

5) Action in strong magnetic field

Use caution when using the IC in the presence of a strong magnetic field as doing so may cause the IC to malfunction.

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14/17

2010.03 - Rev.B

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