FDB2570 データシートの表示（PDF） - Fairchild Semiconductor
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FDB2570 Datasheet PDF : 5 Pages
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Typical Characteristics
10
ID = 11A
8
6
VDS = 25V
50V
75V
4
2
0
0
6
12
18
24
30
36
42
Qg, GATE CHARGE (nC)
Figure 7. Gate Charge Characteristics.
100
RDS(ON) LIMIT
10
10us
100us
1ms
10ms
100ms
DC
1
VGS = 10V
SINGLE PULSE
RθJC = 1.6oC/W
TA = 25oC
0.1
1
10
100
VDS, DRAIN-SOURCE VOLTAGE (V)
1000
Figure 9. Maximum Safe Operating Area.
3000
2500
2000
CISS
f = 1MHz
VGS = 0 V
1500
1000
COSS
500
CRSS
0
0
20
40
60
80
100
120
VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 8. Capacitance Characteristics.
2000
1500
SINGLE PULSE
RθJA = 1.6°C/W
TA = 25°C
1000
500
0
0.00001
0.0001
0.001
0.01
0.1
1
t1, TIME (sec)
Figure 10. Single Pulse Maximum
Power Dissipation.
1
D = 0.5
0.2
0.1
0.1
0.05
0.02
0.01
0.01
0.00001
SINGLE PULSE
0.0001
0.001
0.01
RθJA(t) = r(t) * RθJC
RθJC = 1.6 °C/W
P(pk)
t1
t2
TJ - TA = P * RθJC(t)
Duty Cycle, D = t1 / t2
0.1
1
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1.
Transient thermal response will change depending on the circuit board design.
FDP2570/FDB2570 Rev C(W)
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