IPB65R125C7 データシートの表示（PDF） - Infineon Technologies

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IPB65R125C7

Metal Oxide Semiconductor Field Effect Transistor 650V CoolMOS™ C7 Power Transistor

Infineon Technologies 

650VCoolMOS™C7PowerTransistor

IPB65R125C7

1Description

CoolMOS™isarevolutionarytechnologyforhighvoltagepower

MOSFETs,designedaccordingtothesuperjunction(SJ)principleand

pioneeredbyInfineonTechnologies.

CoolMOS™C7seriescombinestheexperienceoftheleadingSJ

MOSFETsupplierwithhighclassinnovation.Theproductportfolio

providesallbenefitsoffastswitchingsuperjunctionMOSFETsoffering

betterefficiency,reducedgatecharge,easyimplementationand

outstandingreliability.

Features

•IncreasedMOSFETdv/dtruggedness

•BetterefficiencyduetobestinclassFOMRDS(on)*EossandRDS(on)*Qg

•BestinclassRDS(on)/package

•Easytouse/drive

•Pb-freeplating,halogenfreemoldcompound

•QualifiedforindustrialgradeapplicationsaccordingtoJEDEC(J-STD20

andJESD22)

Benefits

•Enablinghighersystemefficiency

•Enablinghigherfrequency/increasedpowerdensitysolutions

•Systemcost/sizesavingsduetoreducedcoolingrequirements

•Highersystemreliabilityduetoloweroperatingtemperatures

Applications

PFCstagesandhardswitchingPWMstagesfore.g.Computing,Server,

Telecom,UPSandSolar.

Pleasenote:ForMOSFETparallelingtheuseofferritebeadsonthegate

orseparatetotempolesisgenerallyrecommended.

D²PAK

tab

2

1

3

Gate

Pin 1

Drain

Pin 2, tab

Source

Pin 3

Table1KeyPerformanceParameters

Parameter

Value

Unit

VDS @ Tj,max

700

V

RDS(on),max

125

mΩ

Qg.typ

35

nC

ID,pulse

75

A

Eoss@400V

4.2

µJ

Body diode di/dt

55

A/µs

Type/OrderingCode

IPB65R125C7

Package

PG-TO 263

Marking

65C7125

RelatedLinks

see Appendix A

Final Data Sheet

2

Rev.2.0,2013-10-11

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