XN1A312(2001) データシートの表示（PDF） - Panasonic Corporation
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XN1A312 Datasheet PDF : 5 Pages
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Composite Transistors
s Electrical Characteristics (Ta=25˚C)
q Tr1
Parameter
Symbol
Collector to base voltage
Collector to emitter voltage
Collector cutoff current
Emitter cutoff current
Forward current transfer ratio
Collector to emitter saturation voltage
Output voltage high level
Output voltage low level
Transition frequency
Input resistance
Resistance ratio
VCBO
VCEO
ICBO
ICEO
IEBO
hFE
VCE(sat)
VOH
VOL
fT
R1
R1/R2
Conditions
IC = 10µA, IE = 0
IC = 2mA, IB = 0
VCB = 50V, IE = 0
VCE = 50V, IB = 0
VEB = 6V, IC = 0
VCE = 10V, IC = 5mA
IC = 10mA, IB = 0.3mA
VCC = 5V, VB = 0.5V, RL = 1kΩ
VCC = 5V, VB = 2.5V, RL = 1kΩ
VCB = 10V, IE = –1mA, f = 200MHz
min
50
50
60
4.9
–30%
0.8
XN0A312
typ max Unit
V
V
0.1
µA
0.5
µA
0.2
mA
0.25
V
V
0.2
V
150
MHz
22 +30% kΩ
1.0
1.2
q Tr2
Parameter
Symbol
Collector to base voltage
Collector to emitter voltage
Collector cutoff current
Emitter cutoff current
Forward current transfer ratio
Collector to emitter saturation voltage
Output voltage high level
Output voltage low level
Transition frequency
Input resistance
Resistance ratio
VCBO
VCEO
ICBO
ICEO
IEBO
hFE
VCE(sat)
VOH
VOL
fT
R1
R1/R2
Conditions
IC = –10µA, IE = 0
IC = –2mA, IB = 0
VCB = –50V, IE = 0
VCE = –50V, IB = 0
VEB = –6V, IC = 0
VCE = –10V, IC = –5mA
IC = –10mA, IB = – 0.3mA
VCC = –5V, VB = –0.5V, RL = 1kΩ
VCC = –5V, VB = –2.5V, RL = 1kΩ
VCB = –10V, IE = 1mA, f = 200MHz
min
–50
–50
60
–4.9
–30%
0.8
typ max Unit
V
V
– 0.1 µA
– 0.5 µA
– 0.2 mA
– 0.25 V
V
– 0.2
V
80
MHz
22 +30% kΩ
1.0
1.2
2
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