BLF278 データシートの表示（PDF） - Philips Electronics
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BLF278 Datasheet PDF : 21 Pages
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Philips Semiconductors
VHF push-pull power MOS transistor
Product Specification
BLF278
30
handbook, halfpage
Gp
(dB)
(1)
20
10
MGE682
(2)
0
0
200
400
600
PL (W)
Class-B operation; VDS = 50 V; IDQ = 2 × 0.1 A; f = 108 MHz;
ZL = 3.2 + j4.3 Ω (per section); RGS = 4 Ω (per section).
(1) Th = 25 °C.
(2) Th = 70 °C.
Fig.9 Power gain as a function of load power,
typical values.
600
handbook, halfpage
PL
(W)
(1)
400
(2)
200
MGE684
80
handbook, halfpage
ηD
(%)
60
(2)
(1)
(1)
(2)
40
MGE683
20
0
0
200
400
600
PL (W)
Class-B operation; VDS = 50 V; IDQ = 2 × 0.1 A; f = 108 MHz;
ZL = 3.2 + j4.3 Ω (per section); RGS = 4 Ω (per section).
(1) Th = 25 °C.
(2) Th = 70 °C.
Fig.10 Efficiency as a function of load power,
typical values.
0
0
5
10 Pi (W) 15
Class-B operation; VDS = 50 V; IDQ = 2 × 0.1 A; f = 108 MHz;
ZL = 3.2 + j4.3 Ω (per section); RGS = 4 Ω (per section).
(1) Th = 25 °C.
(2) Th = 70 °C.
Fig.11 Load power as a function of input power,
typical values.
1996 Oct 21
7
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