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QSB320F データシートの表示(PDF) - Fairchild Semiconductor

部品番号
コンポーネント説明
メーカー
QSB320F
Fairchild
Fairchild Semiconductor 
QSB320F Datasheet PDF : 3 Pages
1 2 3
QSB320F
SURFACE MOUNT SILICON
INFRARED PHOTOTRANSISTOR
PACKAGE DIMENSIONS
0.118 (3.0)
0.102 (2.6)
0.091 (2.3)
0.083 (2.1)
0.035 (0.9)
0.028 (0.7)
0.083 (2.1)
0.067 (1.7)
0.041 (0.1)
0.134 (3.4)
0.118 (3.0)
0.094 (2.4)
COLLECTOR
0.024 (0.6)
0.016 (0.4)
0.007 (.18)
0.005 (.12)
0.043 (1.1)
0.020 (0.5)
NOTES:
1. Dimensions for all drawings are in inches (millimeters).
2. Tolerance of ± .010 (.25) on all non nominal dimensions
unless otherwise specified.
FEATURES
Surface Mount PLCC-2 Package
Wide Reception Angle, 120°
High Sensitivity
Phototransistor Output
Matched Emitter: QEB421
Daylight Filter
SCHEMATIC
COLLECTOR
EMITTER
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified)
Parameter
Operating Temperature
Storage Temperature
Soldering Temperature (Flow)(2,3)
Collector Emitter Voltage
Emitter Collector Voltage
Collector Current
Power Dissipation(1)
Symbol
Rating
Unit
TOPR
-55 to +100
°C
TSTG
-55 to +100
°C
TSOL-F 260 for 10 sec
°C
VCE
35
V
VEC
5
V
IC
15
mA
PD
165
mW
NOTES
1. Derate power dissipation linearly
2.2 mW/°C above 25°C.
2. RMA flux is recommended.
3. Methanol or isopropyl alcohols
are recommended as cleaning
agents.
4. D= 940 nm.
ELECTRICAL / OPTICAL CHARACTERISTICS (TA =25°C)
PARAMETER
TEST CONDITIONS
SYMBOL
MIN
Peak Sensitivity Wavelength
Wavelength Sensitivity Range
Reception Angle
DPS
DSR
700
0
Collector Emitter Dark Current
VCE = 25 V, Ee = 0
ID
Collector Emitter Breakdown
IC = 1 mA
BVCEO
30
Emitter Collector Breakdown
IE = 100 µA
BVECO
5
On-State Collector Current
Ee = 0.1 mW/cm2(4), VCE = 5 V
IC (ON)
16
Saturation Voltage
Ee = 0.5 mW/cm2(4), IC = 0.05 mA
VCE (SAT)
Rise Time
VCC = 5 V, RL = 100 1
tr
Fall Time
IC = 1 mA
tf
TYP
MAX
UNITS
880
nm
1000
nm
120
Deg.
200
nA
V
V
µA
0.3
V
8
µs
8
µs
2001 Fairchild Semiconductor Corporation
DS300387 2/26/01
1 OF 3
www.fairchildsemi.com

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