BCR12UM
MITSUBISHI SEMICONDUCTOR 〈TRIAC〉
BCR12UM
MEDIUM POWER USE
INSULATED TYPE, GLASS PASSIVATION TYPE
OUTLINE DRAWING
Dimensions
in mm
10.2
4.5
1.27
TYPE
NAME
VOLTAGE
CLASS
V
φ3.8 ± 0.2
1.4
0.8
2.54
2.54 0.6
2.6 ± 0.4
¡IT (RMS) ...................................................................... 12A
¡VDRM ..............................................................400V/600V
¡IFGT !, IRGT !, IRGT # ........................................... 15mA
¡Viso........................................................................ 1500V
APPLICATION
Light dimmer
V Measurement point of
case temperature
T1 TERMINAL
T2 TERMINAL
GATE TERMINAL
TO-220
MAXIMUM RATINGS
Symbol
Parameter
Voltage class
Unit
8
12
VDRM
Repetitive peak off-state voltage V1
400
600
V
VDSM
Non-repetitive peak off-state voltage V1
500
720
V
Symbol
IT (RMS)
ITSM
I2t
Parameter
RMS on-state current
Surge on-state current
I2t for fusing
PGM
Peak gate power dissipation
PG (AV)
Average gate power dissipation
VGM
Peak gate voltage
IGM
Peak gate current
Tj
Junction temperature
Tstg
Storage temperature
—
Weight
Viso
Isolation voltage
V1. Gate open.
Conditions
Commercial frequency, sine full wave 360° conduction, Tc=84°C V3
60Hz sinewave 1 full cycle, peak value, non-repetitive
Value corresponding to 1 cycle of half wave 60Hz, surge on-state
current
Typical value
Ta=25°C, AC 1 minute, T1 · T2 · G terminal to case
Ratings
Unit
12
A
120
A
60
A2s
5
W
0.5
W
10
V
2
A
–40 ~ +125
°C
–40 ~ +125
°C
2.3
g
1500
V
Feb.1999