Features
1. Low Power-Supply Voltage:
Supply Voltage (VDD)
Input/output Voltage (VDDQ)
Mobile RAM
2.5V ± 0.2V
1.8V ± 0.15V
1.8V ± 0.15V 2.5V ± 0.2V 1.8V ± 0.15V
Standard SDRAM
3.3V
3.3V
2. Low Power Operation:
2-1. Normal self refresh current
Self Refresh Current (IDD6) (MAX.)
Mobile RAM
350µA
Standard SDRAM
2,000µA
2-2. Mobile RAM-specific function for low power consumption
• Partial Array Self Refresh:
Refreshes only a certain portion of the memory cell array to reduce the self-refresh current.
• Temperature Compensated Self Refresh:
Adjusts the refresh frequency in response to changes in temperature to reduce the self-refresh current.
• Deep Power Down:
Cuts internal voltage supply to achieve maximum power reduction.
3. High-Speed Operation:
• 100MHz at CAS Latency 3 (CL = 3) (VDD = 1.8V)
• 133MHz at CAS Latency 3 (CL = 3) (VDD = 2.5V)
4. Wide Temperature Range:
Operating Temperature
Mobile RAM
-25 to +85 °C
Standard SDRAM
0 to 70 °C
5. Organization: 16-bit organization
6. Small Package:
54-ball FBGA (Fine-pitch Ball Grid Array) 8.0mm × 8.0mm × 1.0mm, 0.8mm ball pitch
7. Lead Free (Su − Ag − Cu)
8. Fully compatible with JEDEC Low Power SDRAM
Document No. E0188E40 (Ver.4.0)
The information in this document is subject to change without notice.