BSM200GB120 データシートの表示（PDF） - Infineon Technologies
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BSM200GB120 Datasheet PDF : 9 Pages
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BSM 200 GB 120 DL
Typ. switching time
I = f (IC) , inductive load , Tj = 125°C
par.: VCE = 600 V, VGE = ± 15 V, RG = 4.7 Ω
10 4
ns
t
10 3
tdoff
tdon
10 2
tr
tf
Typ. switching time
t = f (RG) , inductive load , Tj = 125°C
par.: VCE = 600 V, VGE = ± 15 V, IC = 200 A
10 4
ns
t
10 3
10 2
tdoff
tdon
tr
tf
10 1
0
100
200
300
A
500
IC
Typ. switching losses
E = f (IC) , inductive load , Tj = 125°C
par.: VCE = 600 V, VGE = ± 15 V, RG = 4.7 Ω
130
mWs
110
E 100
90
80
70
60
50
40
30
20
Eoff
10
Eon
0
0
100
200
300
A
500
IC
10 1
0
10
20
30
40
Ω
60
RG
Typ. switching losses
E = f (RG) , inductive load , Tj = 125°C
par.: VCE = 600V, VGE = ± 15 V, IC = 200 A
130
mWs
110
E 100
90
80
70
60
50
40
30
20
10
0
0
Eon
Eoff
10
20
30
40
Ω
60
RG
Semiconductor Group
7
Feb-14-1997
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