SMBTA64 データシートの表示（PDF） - Infineon Technologies

部品番号

コンポーネント説明

メーカー

SMBTA64

PNP Silicon Darlington Transistors

Infineon Technologies 

SMBTA63, SMBTA64

Electrical Characteristics at TA = 25°C, unless otherwise specified.

Parameter

Symbol

Values

Unit

min. typ. max.

DC Characteristics

Collector-emitter breakdown voltage

V(BR)CES 30

-

IC = 10 µA, VBE = 0

Collector-base breakdown voltage

V(BR)CBO 30

-

IC = 10 µA, IE = 0

Emitter-base breakdown voltage

V(BR)EBO 10

-

IE = 10 µA, IC = 0

Collector cutoff current

ICBO

-

-

VCB = 30 V, IE = 0

Collector cutoff current

ICBO

-

-

VCB = 30 V, IE = 0 , TA = 150 °C

Emitter cutoff current

IEBO

-

-

VEB = 10 V, IC = 0

DC current gain 1)

hFE

IC = 10 mA, VCE = 5 V

SMBTA63

SMBTA64

5000 -

10000 -

IC = 100 mA, VCE = 5 V

SMBTA63

SMBTA64

10000 -

20000 -

-V

-

-

100 nA

10 µA

100 nA

-

-

-

-

-

Collector-emitter saturation voltage1)

IC = 100 mA, IB = 0.1 mA

Base-emitter saturation voltage 1)

IC = 100 mA, IB = 0.1 mA

VCEsat

-

VBEsat

-

-

1.5 V

-

2

AC Characteristics

Transition frequency

IC = 50 mA, VCE = 5 V, f = 20 MHz

fT

125 -

- MHz

1) Pulse test: t ≤ 300µs, D = 2%

2

Nov-30-2001

Share Link: