NZT751 データシートの表示（PDF） - Fairchild Semiconductor

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NZT751

PNP Current Driver Transistor

Fairchild Semiconductor 

Electrical Characteristics

Symbol

Parameter

PNP Current Driver Transistor

(continued)

TA = 25°C unless otherwise noted

Test Conditions

Min Max Units

OFF CHARACTERISTICS

V(BR)CEO

Collector-Emitter Sustaining Voltage

V(BR)CBO

Collector-Base Breakdown Voltage

V(BR)EBO

Emitter-Base Breakdown Voltage

ICBO

Collector-Cutoff Current

IEBO

Emitter-Cutoff Current

IC = 10 mA, IB = 0

IC = 100 µA, IE = 0

IE = 10 µA, IC = 0

VCB = 80 V, IE = 0

VEB = 4.0 V, IC = 0

ON CHARACTERISTICS*

hFE

DC Current Gain

VCE(sat)

VBE(sat)

VBE(on)

Collector-Emitter Saturation Voltage

Base-Emitter Saturation Voltage

Base-Emitter On Voltage

IC = 50 mA, VCE = 2.0 V

IC = 500 mA, VCE = 2.0 V

IC = 1.0 A, VCE = 2.0 V

IC = 2.0 A, VCE = 2.0 V

IC = 1.0 A, IB = 100 mA

IC = 2.0 A, IB = 200 mA

IC = 1.0 A, IB = 100 mA

IC = 1.0 A, VCE = 2.0 V

SMALL SIGNAL CHARACTERISTICS

fT

Current Gain - Bandwidth Product

*Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%

IC = 50 mA, VCE = 5.0 V,

f = 100 MHz

60

V

80

V

5.0

V

100

nA

0.1

µA

75

75

75

40

0.3

V

0.5

V

1.2

V

1.0

V

75

MHz

DC Typical Characteristics

Typical Pulsed Current Gain

vs Collector Current

140

VCE = 5V

120

100

125 °C

80

60

25 °C

40

- 40 °C

20

0

0.01

0.1

1

10

I C - COLLECTOR CURRENT (A)

Collector-Emitter Saturation

Voltage vs Collector Current

0.6

β = 10

0.5

0.4

125 °C

0.3

0.2

25 °C

0.1

- 40 ºC

0

0.1

1

5

I C - COLLECTOR CURRENT (A)

PP

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