STS3DPFS30 データシートの表示（PDF） - STMicroelectronics
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STS3DPFS30
STMicroelectronics
STS3DPFS30 Datasheet PDF : 5 Pages
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STS3DPFS30
THERMAL DATA
Rthj-amb
Rthj-amb
Tstg
Tj
(*) Thermal Resistance Junction-ambient MOSFET
(*) Thermal Resistance Junction-ambientSCHOTTKY
Storage Temperature Range
Maximum
Junction Temperature
(*) mounted on FR-4 board (steady state)
85
100
-65 to 150
150
oC/W
oC/W
oC
oC
MOSFET ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
OFF
Symbol
V(BR)DSS
IDSS
IGSS
Parameter
Test Conditions
Drain-source
Breakdown Voltage
ID = 250 µA VGS = 0
Zero Gate Voltage VDS = Max Rating
Drain Current (VGS = 0) VDS = Max Rating
Tc = 125 oC
Gate-body Leakage VGS = ± 20 V
Current (VDS = 0)
Min.
30
Typ.
Max.
Unit
V
1
µA
10
µA
± 100 nA
ON (∗)
Symbol
VGS(th)
RDS(on)
ID(on)
Parameter
Test Conditions
Gate Threshold Voltage VDS = VGS ID = 250 µA
Static Drain-source On VGS = 10V ID = 1.5 A
Resistance
On State Drain Current VDS > ID(on) x RDS(on)max
VGS = 10 V
Min.
2
Typ.
3
0.065
Max.
4
0.09
Unit
V
Ω
3
A
DYNAMIC
Symbol
gfs (∗)
Ciss
Coss
Crss
Parameter
Test Conditions
Forward
Transconductance
VDS > ID(on) x RDS(on)max ID =1.5 A
Input Capacitance
VDS = 25 V
Output Capacitance
Reverse
Transfer
Capacitance
f = 1 MHz
VGS = 0
Min.
Typ.
5
Max.
1600
500
125
Unit
S
pF
pF
pF
2/5
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