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M39432   Hoja de datos

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Fabricante
Número de pieza
componentes Descripción
Ver
ST-Microelectronics
STMicroelectronics
Single Chip 4 Mbit Flash Memory and 256 Kbit Parallel EEPROM
PDF
Match & Start : M39432
Samsung
Samsung
SDRAM Product Guide
Ver
Samsung
Samsung
DDR3 SDRAM Memory
Ver
Samsung
Samsung
240pin Registered DIMM based on 2Gb D-die 78FBGA with Lead-Free & Halogen-Free (RoHS compliant)
Ver
Samsung
Samsung
240pin Registered DIMM based on 1Gb G-die 78FBGA with Lead-Free & Halogen-Free (RoHS compliant)
Ver
ETC
Unspecified
CONTACT SELECTION GUIDE
Ver
Numonyx
Numonyx -> Micron
256 or 512Mbit (x16, Multiple Bank, Multi-Level, Burst) Flash memory 128 Mbit Low Power SDRAM, 1.8V supply, Multi-Chip Package
Ver
Samsung
Samsung
DDR3 SDRAM Memory
Ver
Vishay
Vishay Semiconductors
Wet Tantalum Capacitors, Military Established Reliability, MIL-PRF-39006 Qualified Styles CLR65, 69, 79, 81, 90, 91
Ver
ETC
Unspecified
CONTACT SELECTION GUIDE
Ver
Samsung
Samsung
240pin Registered DIMM based on 1Gb G-die 78FBGA with Lead-Free & Halogen-Free (RoHS compliant)
Ver
Numonyx
Numonyx -> Micron
256 or 512Mbit (x16, Multiple Bank, Multi-Level, Burst) Flash memory 128 Mbit Low Power SDRAM, 1.8V supply, Multi-Chip Package
Ver
Samsung
Samsung
DDR3 SDRAM Memory
Ver
Vishay
Vishay Semiconductors
Wet Tantalum Capacitors, Military Established Reliability, MIL-PRF-39006 Qualified Styles CLR65, 69, 79, 81, 90, 91
Ver
Samsung
Samsung
DDR3 SDRAM Memory
Ver
Samsung
Samsung
DDR3 SDRAM Memory
Ver
ETC
Unspecified
CONTACT SELECTION GUIDE
Ver
Samsung
Samsung
DDR2 Registered SDRAM MODULE
Ver
VAISH
Vaishali Semiconductor
Solid-Electrolyte TANTALEX® Capacitors, Military MIL-C-39003 Qualified, Syles CSR13, 21, 23, 33
Ver
Numonyx
Numonyx -> Micron
512 Mb or 1 Gb (x16, multiple bank, multilevel, burst) Flash memory 256 Mbit low power SDRAM, 1.8 V supply, multichip package
Ver
Samsung
Samsung
DDR3 SDRAM Memory
Ver
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