C9001B PDF, C9001B Hoja de datos

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C9001B Hoja de datos

Fabricante

Número de pieza

componentes Descripción

Ver

Vishay Semiconductors

RN60C9001BB14

Metal Film Resistors, Axial, Military, MIL-R-10509 Qualified, Precision, Type RN and MIL-PRF-22684 Qualified, Type RL

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Match & Start : C9001B

MITSUBISHI ELECTRIC

C908

NPN EPITAXIAL PLANAR TYPE (RF POWER TRANSISTOR)

Ver

Usha Ltd

C900

Transistor. Low frequency, Low Noise Amplifier / Collector-base voltage Vcbo = 30V

Ver

PerkinElmer Inc

C900

Channel photomultiplexer

Ver

Hamamatsu Photonics

C9001

Driver circuit for CMOS linear image sensor

Ver

KEC

C9013

EPITAXIAL PLANAR NPN TRANSISTOR

Ver

Hamamatsu Photonics

C9052

Si photodiode evaluation circuit

Ver

Usha Ltd

C9011

Transistors

Ver

KEC

C9015

EPITAXIAL PLANAR PNP TRANSISTOR

Ver

Unspecified

C9013

Transistors

Ver

Hamamatsu Photonics

C9051

Photosensor amplifier

Ver

Hamamatsu Photonics

C9069

PSD signal processing circuit

Ver

Hamamatsu Photonics

C9004

Driver circuit for Si photodiode array

Ver

Unspecified

C9014

PRE-AMPLIFIER, LOW LEWEL & LOW NOICE

Ver

Usha Ltd

C9013

Transistors

Ver

Usha Ltd

C9018

Transistors

Ver

Hamamatsu Photonics

C9068

PSD signal processing circuit

Ver

Hamamatsu Photonics

C9004_2002

Driver circuit for Si photodiode array

Ver

Usha Ltd

C9014

Transistors, pre-amplifier, low lewel & low noice, 50V, 100mA, 450mW

Ver

Usha Ltd

C9016

Transistor. AM converter, FM/RF amplifier of low noise. Collector-base voltage Vcbo = 30V. Collector-emitter voltage Vceo = 20V. Emitter-base voltage Vebo = 4V. Collector dissipation Pc(max) = 400mW. Collector current Ic = 25mA.

Ver

Unspecified

C9011A

4C 22 AWG 7/30 TC PVC / PVC

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