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C5337   Hoja de datos

coincide,
conparecido a
C5337(3)
C5337B(1)
comienza con
C5337-*(1)
termina en
*MC5337(2)
*SC5337(4)
Incluido
*C5337-*(9)
*C5337B*(1)
*C5337M*(60)
Fabricante
ALL
California Eastern L...
NEC => Renesas Techn...
Renesas Electronics
Fabricante
Número de pieza
componentes Descripción
Ver
NEC
NEC => Renesas Technology
C5337
NPN EPITAXIAL SILICON TRANSISTOR
PDF
Renesas
Renesas Electronics
C5337
NPN Silicon RF Transistor for High-Frequency Low Distortion Amplifier 4-Pin Power Minimold
PDF
CEL
California Eastern Laboratories.
C5337
NPN Silicon RF Transistor for High-Frequency Low Distortion Amplifier 4-Pin Power Minimold
PDF
Match & Start : C5337
NEC
NEC => Renesas Technology
C5337-T1
NPN EPITAXIAL SILICON TRANSISTOR
Ver
Hamamatsu
Hamamatsu Photonics
C5331-04
Operates an APD with single 5 V supply
Ver
Hamamatsu
Hamamatsu Photonics
C5331-12
Operates an APD with single 5 V supply
Ver
Hamamatsu
Hamamatsu Photonics
C5331-03
Operates an APD with single 5 V supply
Ver
Hamamatsu
Hamamatsu Photonics
C5331-31
Operates an APD with single 5 V supply
Ver
NEC
NEC => Renesas Technology
C5336-T1
NPN Silicon Transistor
Ver
Hamamatsu
Hamamatsu Photonics
C5331-11
Operates an APD with single 5 V supply
Ver
Hamamatsu
Hamamatsu Photonics
C5331-02
Operates an APD with single 5 V supply
Ver
Hamamatsu
Hamamatsu Photonics
C5331-30
Operates an APD with single 5 V supply
Ver
Hamamatsu
Hamamatsu Photonics
C5331-05
Operates an APD with single 5 V supply
Ver
NEC
NEC => Renesas Technology
C5338-T1
NPN EPITAXIAL SILICON TRANSISTOR HIGH FREQUENCY LOW DISTORTION AMPLIFIER
Ver
Hamamatsu
Hamamatsu Photonics
C5331-01
Operates an APD with single 5 V supply
Ver
Hamamatsu
Hamamatsu Photonics
C5331-13
Operates an APD with single 5 V supply
Ver
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