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AFGY160T65SPD-B4   Hoja de datos

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ONSEMI
ON Semiconductor
Field Stop Trench IGBT With Soft Fast Recovery Diode and VCESAT, VTH Binning 650 V, 160 A
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Match & Start : AFGY160T65SPD-B4
ONSEMI
ON Semiconductor
Field Stop Trench IGBT with Soft Fast Recovery Diode 100A, 650V
Ver
ONSEMI
ON Semiconductor
Field Stop Trench IGBT With Soft Fast Recovery Diode and VCESAT, VTH Binning 650 V, 120 A
Ver
ONSEMI
ON Semiconductor
Field Stop Trench IGBT With Soft Fast Recovery Diode and VCESAT, VTH Binning 650 V, 120 A
Ver
ONSEMI
ON Semiconductor
Field Stop Trench IGBT With Soft Fast Recovery Diode and VCESAT, VTH Binning 650 V, 120 A
Ver
ONSEMI
ON Semiconductor
Field Stop Trench IGBT With Soft Fast Recovery Diode and VCESAT, VTH Binning 650 V, 120 A
Ver
ONSEMI
ON Semiconductor
Field Stop Trench IGBT With Soft Fast Recovery Diode and VCESAT, VTH Binning 650 V, 120 A
Ver
ONSEMI
ON Semiconductor
Field Stop Trench IGBT With Soft Fast Recovery Diode and VCESAT, VTH Binning 650 V, 160 A
Ver
ONSEMI
ON Semiconductor
Field Stop Trench IGBT With Soft Fast Recovery Diode and VCESAT, VTH Binning 650 V, 160 A
Ver
ONSEMI
ON Semiconductor
Field Stop Trench IGBT With Soft Fast Recovery Diode and VCESAT, VTH Binning 650 V, 160 A
Ver
ONSEMI
ON Semiconductor
Field Stop Trench IGBT With Soft Fast Recovery Diode and VCESAT, VTH Binning 650 V, 160 A
Ver
ONSEMI
ON Semiconductor
Field Stop Trench IGBT With Soft Fast Recovery Diode and VCESAT, VTH Binning 650 V, 160 A
Ver
1


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