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20N60E1   Hoja de datos

coincide,
conparecido a
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Fabricante
Número de pieza
componentes Descripción
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SILIKRON
Silikron Semiconductor Co.,LTD.
Trench FS technology offering
PDF
Match & Start : 20N60E1
IXYS
IXYS CORPORATION
High Voltage IGBT with optional Diode
Ver
YFWDIODE
DONGGUAN YOU FENG WEI ELECTRONICS CO., LTD
20A 600V N-Channel Enhancement Mode Field Effect Transistor
Ver
Infineon
Infineon Technologies
Cool MOS™ Power Transistor
Ver
Fairchild
Fairchild Semiconductor
600V, SMPS Series N-Channel IGBTs
Ver
YFWDIODE
DONGGUAN YOU FENG WEI ELECTRONICS CO., LTD
20A 600V N-Channel Enhancement Mode Field Effect Transistor
Ver
Infineon
Infineon Technologies
Cool MOS™ Power Transistor
Ver
Infineon
Infineon Technologies
Cool MOS™ Power Transistor
Ver
Infineon
Infineon Technologies
Cool MOS™ Power Transistor
Ver
Infineon
Infineon Technologies
Cool MOS™ Power Transistor
Ver
Infineon
Infineon Technologies
SPW20N60S5 / 20N60S5 / Cool MOS Power Transistor
Ver
Infineon
Infineon Technologies
Cool MOS™ Power Transistor
Ver
Infineon
Infineon Technologies
Cool MOS™ Power Transistor
Ver
Intersil
Intersil
45A, 600V, UFS Series N-Channel IGBT
Ver
Intersil
Intersil
600V, SMPS Series N-Channel IGBTs
Ver
Fuji
Fuji Electric
N-Channel enhancement mode power MOSFET
Ver
YFWDIODE
DONGGUAN YOU FENG WEI ELECTRONICS CO., LTD
20A 600V N-Channel Enhancement Mode Field Effect Transistor
Ver
Infineon
Infineon Technologies
Cool MOS™ Power Transistor
Ver
Infineon
Infineon Technologies
Cool MOS™ Power Transistor
Ver
Infineon
Infineon Technologies
Cool MOS™ Power Transistor
Ver
Hitachi
Hitachi -> Renesas Electronics
HITACHI Encapsulation, DIP 16
Ver
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