SUMMARY
V(BR)DSS= 100V : RDS(on)= 0.7 ID= 0.8A

DESCRIPTION
This new generation of Trench MOSFETs from TY utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage power management applications.

FEATURES
• Low on-resistance
• Fast switching speed
• Low threshold
• Low gate drive
• SOT23 package

APPLICATIONS
• DC-DC converters
• Power Management functions
• Disconnect switches
• Motor control