Número de pieza
WNMD9926
componentes Descripción
Other PDF
no available.
PDF
page
8 Pages
File Size
934.3 kB
Fabricante

Will Semiconductor Ltd.
Descriptions
The WNMD9926 is the Dual N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in DC-DC conversion, power switch and charging circuit. Standard Product WNMD9926 is Pb-free.
FEATUREs
● Trench Technology
● Supper high density cell design
● Excellent ON resistance
● Extremely Low Threshold Voltage
● package SOP-8L
APPLICATIONs
● DC/DC converters
● Power supply converters circuit
● Load/Power Switching for portable device