General Description
   This Power MOSFET is produced using Winsemis advancedplanar stripe,VDMOS technology.this latest technology has beenespecially designed to minimize on-state resistance, have a high rugged avalanche characteristics .This devices is specially wellsuited for half bridge and full bridge resonant topology line a electronic lamp ballast, high efficiency switched mode power supplies, active power factor correction.

FEATUREs
◾ 7.5A,600V,RDS(on)(Max1.2Ω)@VGS=10V
◾ Ultra-low Gate charge(Typical 25nC)
◾ Fast Switching Capability
◾ 100%Avalanche Tested
◾ Isolation Voltage (VISO=4000V AC)
◾ Maximum Junction Temperature Range(150℃ )