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VT2045CBP Hoja de datos - Vishay Semiconductors

VT2045CBP image

Número de pieza
VT2045CBP

Other PDF
  2010   2012  

PDF
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page
5 Pages

File Size
120.6 kB

Fabricante
Vishay
Vishay Semiconductors 

FEATURES
• Trench MOS Schottky technology
• Low forward voltage drop, low power losses
• High efficiency operation
• Solder dip 275 °C max. 10 s, per JESD 22-B106
• TJ 200 °C max. in solar bypass mode application
• Material categorization: for definitions of compliance please see www.vishay.com/doc?99912

TYPICAL APPLICATIONS
   For use in solar cell junction box as a bypass diode for protection, using DC forward current without reverse bias.

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