Número de pieza
VT2045C-M3
componentes Descripción
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6 Pages
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122.3 kB
Fabricante
Vishay Semiconductors
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Vishay Semiconductors
FEATURES
• Trench MOS Schottky technology
• Low forward voltage drop, low power losses
• High efficiency operation
• Solder dip 275 °C max. 10 s, per JESD 22-B106
• AEC-Q101 qualified
• Material categorization: For definitions of compliance please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
For use in high frequency DC/DC converters, switching power supplies, freewheeling diodes, OR-ing diode, and reverse battery protection.
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Dual Low-Voltage Trench MOS Barrier Schottky Rectifier ( Rev : 2017 )
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Dual Low-Voltage Trench MOS Barrier Schottky Rectifier ( Rev : 2017 )
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Dual Low-Voltage Trench MOS Barrier Schottky Rectifier ( Rev : 2013 )
Vishay Semiconductors
Dual Low-Voltage Trench MOS Barrier Schottky Rectifier ( Rev : 2017 )
Vishay Semiconductors
Dual Low-Voltage Trench MOS Barrier Schottky Rectifier ( Rev : 2013 )
Vishay Semiconductors
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