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VSMY98545DS(2015) Hoja de datos - Vishay Semiconductors

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VSMY98545DS

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7 Pages

File Size
249.3 kB

Fabricante
Vishay
Vishay Semiconductors 

DESCRIPTION
As part of the SurfLightTM portfolio, the VSMY98545DS is an infrared, 850 nm emitting diode based on surface emitter technology with high radiant power and high speed, molded in low thermal resistance SMD package with lens. A 42 mil chip provides outstanding radiant intensity and allows DC operation of the device up to 1 A. Superior ESD characteristics are ensured by an integrated Zener diode.


FEATURES
• Package type: surface mount
• Double stack technology
• Package form: high power SMD with lens
• Dimensions (L x W x H in mm): 3.85 x 3.85 x 2.24
• Peak wavelength: λp = 850 nm
• Zener diode for ESD protection up to 2 kV
• High radiant power
• High radiant intensity
• Angle of half intensity: ϕ = ± 45°
• Designed for high drive currents: up to 1 A (DC) and up
   to 5 A pulses
• Low thermal resistance: RthJP = 10 K/W
• Floor life: 168 h, MSL 3, acc. J-STD-020
• Lead (Pb)-free reflow soldering
• Material categorization: for definitions of compliance
   please see www.vishay.com/doc?99912


APPLICATIONS
• Infrared illumination for CMOS cameras (CCTV)
• Illumination for cameras (3D gaming)
• Machine vision
• 3D TV


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Fabricante
High Power Infrared Emitting Diode, 850 nm, Surface Emitter Technology ( Rev : 2016 )
PDF
Vishay Semiconductors
High Power Infrared Emitting Diode, 850 nm, Surface Emitter Technology ( Rev : 2011_03 )
PDF
Vishay Semiconductors
High Power Infrared Emitting Diode, 850 nm, Surface Emitter Technology
PDF
Vishay Semiconductors
High Power Infrared Emitting Diode, 850 nm, Surface Emitter Technology
PDF
Vishay Semiconductors
High Power Infrared Emitting Diode, 850 nm, Surface Emitter Technology
PDF
Vishay Semiconductors
High Power Infrared Emitting Diode, 850 nm, Surface Emitter Technology
PDF
Vishay Semiconductors
High Power Infrared Emitting Diode, 850 nm, Surface Emitter Technology
PDF
Vishay Semiconductors
High Power Infrared Emitting Diode, 850 nm, Surface Emitter Technology
PDF
Vishay Semiconductors
High Power Infrared Emitting Diode, 850 nm, Surface Emitter Technology ( Rev : 2016 )
PDF
Vishay Semiconductors
High Power Infrared Emitting Diode, 850 nm, Surface Emitter Technology ( Rev : 2011 )
PDF
Vishay Semiconductors

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