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VSMY7850X01(2011_03) Hoja de datos - Vishay Semiconductors

VSMY7850X01 image

Número de pieza
VSMY7850X01

Other PDF
  2011   lastest PDF  

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page
6 Pages

File Size
116 kB

Fabricante
Vishay
Vishay Semiconductors 

DESCRIPTION
VSMY7850X01 is an infrared, 850 nm emitting diode based on surface emitter technology with high radiant power and high speed, molded in low thermal resistance Little Star package. A 42 mil chip provides outstanding low forward voltage and allows DC operation of the device up to 1 A.


FEATURES
• Package type: surface mount
• Package form: Little Star®
• Dimensions (L x W x H in mm): 6.0 x 7.0 x 1.5
• Peak wavelength: λp = 850 nm
• High reliability
• High radiant power
• High radiant intensity
• Angle of half intensity: φ = ± 60°
• Low forward voltage
• Designed for high drive currents: up to 1 A DC and up to
   4 A pulses
• Low thermal resistance: RthJP = 10 K/W
• Floor life: 4 weeks, MSL 2a, acc. J-STD-020
• Lead (Pb)-free reflow soldering
• AEC-Q101 qualified
• Compliant to RoHS Directive 2002/95/EC and in
   accordance to WEEE 2002/96/EC


APPLICATIONS
• Infrared illumination for CMOS cameras (CCTV)
• Driver assistance systems
• Machine vision IR data transmission


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Fabricante
High Power Infrared Emitting Diode, 850 nm, Surface Emitter Technology ( Rev : 2016 )
PDF
Vishay Semiconductors
High Power Infrared Emitting Diode, 850 nm, Surface Emitter Technology
PDF
Vishay Semiconductors
High Power Infrared Emitting Diode, 850 nm, Surface Emitter Technology
PDF
Vishay Semiconductors
High Power Infrared Emitting Diode, 850 nm, Surface Emitter Technology
PDF
Vishay Semiconductors
High Power Infrared Emitting Diode, 850 nm, Surface Emitter Technology
PDF
Vishay Semiconductors
High Power Infrared Emitting Diode, 850 nm, Surface Emitter Technology
PDF
Vishay Semiconductors
High Power Infrared Emitting Diode, 850 nm, Surface Emitter Technology ( Rev : 2016 )
PDF
Vishay Semiconductors
High Power Infrared Emitting Diode, 850 nm, Surface Emitter Technology ( Rev : 2011 )
PDF
Vishay Semiconductors
High Power Infrared Emitting Diode, 850 nm, Surface Emitter Technology
PDF
Vishay Semiconductors
High Power Infrared Emitting Diode, 850 nm, Surface Emitter Technology
PDF
Vishay Semiconductors

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