VSMB1940ITX01(2014) Hoja de datos - Vishay Semiconductors
Número de pieza
VSMB1940ITX01
Fabricante

Vishay Semiconductors
DESCRIPTION
VSMB1940ITX01 is an infrared, 940 nm emitting diode in GaAlAs double hetero technology with high radiant power and high speed, molded in clear, untinted 0805 plastic package for surface mounting (SMD).
FEATURES
• Package type: surface mount
• Package form: 0805
• Dimensions (L x W x H in mm): 2 x 1.25 x 0.85
• AEC-Q101 qualified
• Enhanced operating temperature range:
-40 °C to +105 °C
• Peak wavelength: λp = 940 nm
• High reliability
• High radiant power
• High radiant intensity
• High speed
• Angle of half sensitivity: Ø = ± 60°
• Low forward voltage
• Suitable for high pulse current operation
• 0805 standard surface-mountable package
• Floor life: 72 h, MSL 4, acc. J-STD-020
• Lead (Pb)-free reflow soldering
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
APPLICATIONS
• IR emitter for automotive applications
• High power emitter for low space applications
• High performance transmissive or reflective sensors
Número de pieza
componentes Descripción
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Fabricante
High Speed Infrared Emitting Diode, 940 nm, GaAlAs Double Hetero ( Rev : 2009 )
Vishay Semiconductors
High Speed Infrared Emitting Diode, 940 nm, GaAlAs Double Hetero
Vishay Semiconductors
High Speed Infrared Emitting Diode, 940 nm, GaAlAs Double Hetero ( Rev : 2010 )
Vishay Semiconductors
High Speed Infrared Emitting Diode, 940 nm, GaAlAs Double Hetero
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High Speed Infrared Emitting Diode, 870 nm, GaAlAs Double Hetero ( Rev : 2009 )
Vishay Semiconductors
High Speed Infrared Emitting Diode, 870 nm, GaAlAs Double Hetero
Vishay Semiconductors
High Speed Infrared Emitting Diode, 870 nm, GaAlAs Double Hetero ( Rev : 2009 )
Vishay Semiconductors