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VSMA1085400 Hoja de datos - Vishay Semiconductors

VSMA1085400 image

Número de pieza
VSMA1085400

Other PDF
  no available.

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page
8 Pages

File Size
192 kB

Fabricante
Vishay
Vishay Semiconductors 

DESCRIPTION
As part of the SurfLightTM portfolio, the VSMA1085400 is an infrared, 850 nm emitting diode. It features a double stack emitter chip for highest radiant power. The 42 mil chip size allows 1.5 A DC operation and supports pulsed currents up to 5.0 A.


FEATURES
• Package type: surface-mount
• Package form: high power SMD with lens
• Dimensions (L x W x H in mm): 3.4 x 3.4 x 2.45
• Centroid wavelength: λcentroid = 850 nm
• Angle of half intensity: ϕ = ± 40°
• Designed for high drive currents: up to 1.5 A (DC)
   and up to 5 A (pulsed)
• Low thermal resistance: 6 K/W < RthJSP < 9 K/W
• ESD: up to 5 kV (according to ANSI / ESDA /
   JEDEC® JS-001)
• Floor life: 168 h, MSL 3, according to J-STD-020E
• Lead (Pb)-free reflow soldering
• Material categorization: for definitions of compliance
   please see www.vishay.com/doc?99912


APPLICATIONS
• Driver and occupant monitoring
• Eye tracking
• Safety and security, CCTV


Número de pieza
componentes Descripción
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Fabricante
High Power Infrared Emitting Diode, 850 nm, Surface Emitter Technology ( Rev : 2016 )
PDF
Vishay Semiconductors
High Power Infrared Emitting Diode, 850 nm, Surface Emitter Technology ( Rev : 2011_03 )
PDF
Vishay Semiconductors
High Power Infrared Emitting Diode, 850 nm, Surface Emitter Technology
PDF
Vishay Semiconductors
High Power Infrared Emitting Diode, 850 nm, Surface Emitter Technology
PDF
Vishay Semiconductors
High Power Infrared Emitting Diode, 850 nm, Surface Emitter Technology
PDF
Vishay Semiconductors
High Power Infrared Emitting Diode, 850 nm, Surface Emitter Technology
PDF
Vishay Semiconductors
High Power Infrared Emitting Diode, 850 nm, Surface Emitter Technology
PDF
Vishay Semiconductors
High Power Infrared Emitting Diode, 850 nm, Surface Emitter Technology ( Rev : 2016 )
PDF
Vishay Semiconductors
High Power Infrared Emitting Diode, 850 nm, Surface Emitter Technology ( Rev : 2011 )
PDF
Vishay Semiconductors
High Power Infrared Emitting Diode, 850 nm, Surface Emitter Technology
PDF
Vishay Semiconductors

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