Número de pieza
VIT1045C-M3-4W
componentes Descripción
Other PDF
PDF
page
5 Pages
File Size
127.6 kB
Fabricante
Vishay Semiconductors
HOME >>> Vishay Semiconductors >>> VIT1045C-M3-4W PDF
VIT1045C-M3-4W(2017) Hoja de datos - Vishay Semiconductors
Vishay Semiconductors
FEATURES
• Trench MOS Schottky technology
• Low forward voltage drop, low power losses
• High efficiency operation
• Solder dip 275 °C max. 10 s, per JESD 22-B106
• Material categorization: for definitions of compliance please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
For use in high frequency DC/DC converters, switching power supplies, freewheeling diodes, OR-ing diode, and reverse battery protection.
Número de pieza
componentes Descripción
Ver
Fabricante
Dual Low-Voltage Trench MOS Barrier Schottky Rectifier ( Rev : 2017 )
Vishay Semiconductors
Dual Low-Voltage Trench MOS Barrier Schottky Rectifier ( Rev : 2013 )
Vishay Semiconductors
Dual Low-Voltage Trench MOS Barrier Schottky Rectifier ( Rev : 2017 )
Vishay Semiconductors
Dual Low-Voltage Trench MOS Barrier Schottky Rectifier ( Rev : 2013 )
Vishay Semiconductors
Dual Low-Voltage Trench MOS Barrier Schottky Rectifier ( Rev : 2018 )
Vishay Semiconductors
Dual Low-Voltage Trench MOS Barrier Schottky Rectifier ( Rev : 2013 )
Vishay Semiconductors
Share Link: 