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VI20120SHM3/4W Hoja de datos - Vishay Semiconductors

V20120S image

Número de pieza
VI20120SHM3/4W

Other PDF
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page
5 Pages

File Size
115.4 kB

Fabricante
Vishay
Vishay Semiconductors 

FEATURES
• Trench MOS Schottky technology
• Low forward voltage drop, low power losses
• High efficiency operation
• Solder bath temperature 275 °C max. 10 s, per
   JESD 22-B106
• AEC-Q101 qualified
• Compliant to RoHS Directive 2002/95/EC and in
   accordance to WEEE 2002/96/EC
• Halogen-free according to IEC 61249-2-21 definition

TYPICAL APPLICATIONS
   For use in high frequency DC/DC converters, switching power supplies, freewheeling diodes, OR-ing diode, and reverse battery protection.

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Número de pieza
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Fabricante
High-Voltage Trench MOS Barrier Schottky Rectifier
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Vishay Semiconductors
High-Voltage Trench MOS Barrier Schottky Rectifier
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Vishay Semiconductors
High-Voltage Trench MOS Barrier Schottky Rectifier ( Rev : 2011 )
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Vishay Semiconductors
High-Voltage Trench MOS Barrier Schottky Rectifier
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Vishay Semiconductors
High-Voltage Trench MOS Barrier Schottky Rectifier
PDF
Vishay Semiconductors
High Voltage Trench MOS Barrier Schottky Rectifier
PDF
Vishay Semiconductors
High Voltage Trench MOS Barrier Schottky Rectifier
PDF
Vishay Semiconductors
High-Voltage Trench MOS Barrier Schottky Rectifier
PDF
Vishay Semiconductors
High-Voltage Trench MOS Barrier Schottky Rectifier
PDF
Vishay Semiconductors
High-Voltage Trench MOS Barrier Schottky Rectifier
PDF
Vishay Semiconductors

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